01725nam a2200217Ia 4500 CTU_210727 210402s9999 xx 000 0 und d 55.41 537.6226 B212 Bányai, L. Semiconductor quantum dots L. Bányai, S. W. Koch Singapore World Scientific 1993 The book develops the theoretical background material for the analysis of carrier quantum-confinement effects, it introduces different confinement regimes for absolute or center-of-mass motion quantization of the electron-hole-pairs, and it gives an overview of the best approximation schemes for each regime. A detailed discussion of the carrier states in quantum dots is presented, including variational calculations, a configuration interaction approach, and quantum Monte Carlo techniques. Surface polarization instabilities are analyzed which lead to the self-trapping of carriers near the surface of the dots and the influence of spin-orbit coupling on the quantum-confined carrier states is discussed. The linear and nonlinear optical properties of small and large quantum dots are analyzed in detail, including transient optical nonlinearities (photon echo) and two-photon transitions. The influence of the quantum-dot size distribution in many realistic samples is outlined, including the analysis of quantum dot growth laws and universal size distributions. Semiconductors,Quantum electronics,Chất bán dẫn,Điện tử lượng tử Optical properties,Thuộc tính quang học Qhieu Trung tâm Học liệu Trường Đại học Cần Thơ