00983nam a2200205Ia 4500 CTU_237184 210402s9999 xx 000 0 und d 621.38152 Z44 Zeghbroeck, Van Bart Principles of semiconductor devices Van Bart Zeghbroeck 2011 The current gain capability of a Field-Effect-Transistor (FET) is easily explained by the fact that no gate current is required to maintain the inversion layer and the resulting current between drain and source. The device has therefore an infinite current gain in DC. The current gain is inversely proportional to the signal frequency, reaching unity current gain at the transit frequency Vật lý bán dẫn TN398 Electrical engineering,Kỹ thuật điện Materials.,Vật liệu. Tuyến Trung tâm Học liệu Trường Đại học Cần Thơ