rdf-syntax-grammar
mods:
  schema location: http://www.loc.gov/mods/v3 http://www.loc.gov/standards/mods/v3/mods-3-2.xsd
  title info:
    title: Characteristics of Ni/SiC schottky diodes grown by ICP-CVD
  name:
    name part: Gil, Tae-Hyun.
    role:
      role term: creator
  name:
    name part: Kim, Han-Soo.
  name:
    name part: Kim, Yong-Sang.
  type of resource: text
  origin info:
    issuance: monographic
  language:
    language term: eng
  note: Tae-Hyun Gil, Han-Soo Kim, Yong-Sang Kim.
  subject:
    topic: Breakdown voltage
  subject:
    topic: Chemical vapor depositon
  subject:
    topic: Inductively coupled plasma
  subject:
    topic: Schottky barrier height
  subject:
    topic: Silicon carbide
  related item:
    title info:
      title: Electrophysics and Applications
    part:
      text: Vol. 4-C, no. 3 (2004), p. 111-116
  record info:
    record content source: DLU
    record change date: ##20090619
    record identifier: DLU090078957
    language of cataloging:
      language term: eng