Investigation of AlxGa1-xAs/GaAs heterostructure by annealing at 300~800oC - Bae, In-Ho.; Kim, Dong-Lyeul.; Kim, Ki-Hong.; Park, Hun-Bo.; Yu, Jae-In.; Yun, Jae-Gon.
Keywords: AlGaAs; GaAs; Heterostructure; PR