01235nam a22002297a 4500 NCT_82548 200723b xxu||||| |||| 00| 0 vie d 4062 4062 9810233264 23rd ed. 539.72 O375 Oldham, Timothy R Lonizing radiation effects in mos oxides Timothy R Oldham Singapore World Scientific 1999 xiv, 171 p. 23cm International advances in solid state electronics and technology This volume is intended to serve as an updated critical guide to the extensive literature on the basic physical mechanisms controlling the radiation and reliability responses of MOS oxides. Cơ bản ddc BK 0 0 ddc 0 539_720000000000000_O375 0 19976 000001 000001 2020-07-23 539.72 O375 MD.17420 2020-07-23 2020-07-23 BK 0 0 ddc 0 539_720000000000000_O375 0 19977 000001 000001 2020-07-23 539.72 O375 MD.17421 2020-07-23 2020-07-23 BK 0 0 ddc 0 539_720000000000000_O375 0 19978 000001 000001 2020-07-23 539.72 O375 MD.17422 2020-07-23 2020-07-23 BK Thư viện Trường Đại học Nam Cần Thơ