Nguyễn, Đ. C., & Shih, C. (2023). Oxide thickness-dependent effects of source doping profile on the performance of single- and double-gate tunnel field-effect transistors.
استشهاد بنمط شيكاغوNguyễn, Đăng Chiến, و Chun-Hsing Shih. Oxide Thickness-dependent Effects of Source Doping Profile On the Performance of Single- and Double-gate Tunnel Field-effect Transistors. 2023.
MLA استشهادNguyễn, Đăng Chiến, و Chun-Hsing Shih. Oxide Thickness-dependent Effects of Source Doping Profile On the Performance of Single- and Double-gate Tunnel Field-effect Transistors. 2023.
تحذير: قد لا تكون هذه الاستشهادات دائما دقيقة بنسبة 100%.