Nguyễn, Đ. C., & Shih, C. (2023). Oxide thickness-dependent effects of source doping profile on the performance of single- and double-gate tunnel field-effect transistors.
Chicago-tyylinen lähdeviittausNguyễn, Đăng Chiến, ja Chun-Hsing Shih. Oxide Thickness-dependent Effects of Source Doping Profile On the Performance of Single- and Double-gate Tunnel Field-effect Transistors. 2023.
MLA-viiteNguyễn, Đăng Chiến, ja Chun-Hsing Shih. Oxide Thickness-dependent Effects of Source Doping Profile On the Performance of Single- and Double-gate Tunnel Field-effect Transistors. 2023.
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