Nguyễn, Đ. C., & Shih, C. (2023). Oxide thickness-dependent effects of source doping profile on the performance of single- and double-gate tunnel field-effect transistors.
Stile di citazione ChicagoNguyễn, Đăng Chiến, e Chun-Hsing Shih. Oxide Thickness-dependent Effects of Source Doping Profile On the Performance of Single- and Double-gate Tunnel Field-effect Transistors. 2023.
Citazione MLANguyễn, Đăng Chiến, e Chun-Hsing Shih. Oxide Thickness-dependent Effects of Source Doping Profile On the Performance of Single- and Double-gate Tunnel Field-effect Transistors. 2023.
Attenzione: Queste citazioni potrebbero non essere precise al 100%.