Bui, H. T., Shih, C., & Nguyen, D. C. (2024). A VERY LOW BANDGAP LINE-TUNNEL FIELD EFFECT TRANSISTOR WITH CHANNEL-BURIED OXIDE AND LATERALLY DOPED POCKET. Trường Đại học Đà Lạt.
استشهاد بنمط شيكاغوBui, Huu Thai, Chun-Hsing Shih, و Dang Chien Nguyen. A VERY LOW BANDGAP LINE-TUNNEL FIELD EFFECT TRANSISTOR WITH CHANNEL-BURIED OXIDE AND LATERALLY DOPED POCKET. Trường Đại học Đà Lạt, 2024.
MLA استشهادBui, Huu Thai, Chun-Hsing Shih, و Dang Chien Nguyen. A VERY LOW BANDGAP LINE-TUNNEL FIELD EFFECT TRANSISTOR WITH CHANNEL-BURIED OXIDE AND LATERALLY DOPED POCKET. Trường Đại học Đà Lạt, 2024.
تحذير: قد لا تكون هذه الاستشهادات دائما دقيقة بنسبة 100%.