Cita APA

Bui, H. T., Shih, C., & Nguyen, D. C. (2024). A VERY LOW BANDGAP LINE-TUNNEL FIELD EFFECT TRANSISTOR WITH CHANNEL-BURIED OXIDE AND LATERALLY DOPED POCKET. Trường Đại học Đà Lạt.

Citación estilo Chicago

Bui, Huu Thai, Chun-Hsing Shih, y Dang Chien Nguyen. A VERY LOW BANDGAP LINE-TUNNEL FIELD EFFECT TRANSISTOR WITH CHANNEL-BURIED OXIDE AND LATERALLY DOPED POCKET. Trường Đại học Đà Lạt, 2024.

Cita MLA

Bui, Huu Thai, Chun-Hsing Shih, y Dang Chien Nguyen. A VERY LOW BANDGAP LINE-TUNNEL FIELD EFFECT TRANSISTOR WITH CHANNEL-BURIED OXIDE AND LATERALLY DOPED POCKET. Trường Đại học Đà Lạt, 2024.

Precaución: Estas citas no son 100% exactas.