Bui, H. T., Shih, C., & Nguyen, D. C. (2024). A VERY LOW BANDGAP LINE-TUNNEL FIELD EFFECT TRANSISTOR WITH CHANNEL-BURIED OXIDE AND LATERALLY DOPED POCKET. Trường Đại học Đà Lạt.
Style de citation ChicagoBui, Huu Thai, Chun-Hsing Shih, et Dang Chien Nguyen. A VERY LOW BANDGAP LINE-TUNNEL FIELD EFFECT TRANSISTOR WITH CHANNEL-BURIED OXIDE AND LATERALLY DOPED POCKET. Trường Đại học Đà Lạt, 2024.
Style de citation MLABui, Huu Thai, Chun-Hsing Shih, et Dang Chien Nguyen. A VERY LOW BANDGAP LINE-TUNNEL FIELD EFFECT TRANSISTOR WITH CHANNEL-BURIED OXIDE AND LATERALLY DOPED POCKET. Trường Đại học Đà Lạt, 2024.
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