Bui, H. T., Shih, C., & Nguyen, D. C. (2024). A VERY LOW BANDGAP LINE-TUNNEL FIELD EFFECT TRANSISTOR WITH CHANNEL-BURIED OXIDE AND LATERALLY DOPED POCKET. Trường Đại học Đà Lạt.
Styl cytowania ChicagoBui, Huu Thai, Chun-Hsing Shih, i Dang Chien Nguyen. A VERY LOW BANDGAP LINE-TUNNEL FIELD EFFECT TRANSISTOR WITH CHANNEL-BURIED OXIDE AND LATERALLY DOPED POCKET. Trường Đại học Đà Lạt, 2024.
Styl cytowania MLABui, Huu Thai, Chun-Hsing Shih, i Dang Chien Nguyen. A VERY LOW BANDGAP LINE-TUNNEL FIELD EFFECT TRANSISTOR WITH CHANNEL-BURIED OXIDE AND LATERALLY DOPED POCKET. Trường Đại học Đà Lạt, 2024.
Uwaga: Te cytaty mogą odróżniać się od wytycznej twojego fakultetu..