DRAM circuit design : Fundamentals and high-speed topics

Dynamic Random Access Memory (DRAM) technology has been one of the greatestdriving forces in the advancement of solid-state technology. With its ability to produce high product volumes and low pricing, it forces solid-state memory manufacturers to work aggressively to cut costs while maintaining, if...

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Detaylı Bibliyografya
Materyal Türü:	Kitap
Dil:	Undetermined
Baskı/Yayın Bilgisi:	Hoboken, N. J. Wiley-Interscience 2008
Konular:	Random access memory,Electronic circuit design,Bộ nhớ truy cập ngẫu nhiên,Thiết kế mạch điện tử
Etiketler:	Etiketle Etiket eklenmemiş, İlk siz ekleyin!

Thư viện lưu trữ:	Trung tâm Học liệu Trường Đại học Cần Thơ


LEADER	01186nam a2200205Ia 4500
001	CTU_133006
008	210402s9999 xx 000 0 und d
020			\|c 70.7
082			\|a 621.3973
082			\|b D757
245		0	\|a DRAM circuit design :
245		0	\|b Fundamentals and high-speed topics
245		0	\|c Brent Keeth ... [et al.]
260			\|a Hoboken, N. J.
260			\|b Wiley-Interscience
260			\|c 2008
520			\|a Dynamic Random Access Memory (DRAM) technology has been one of the greatestdriving forces in the advancement of solid-state technology. With its ability to produce high product volumes and low pricing, it forces solid-state memory manufacturers to work aggressively to cut costs while maintaining, if not increasing, their market share. As a result, the state of the art continues to advance owing to the tremendous pressure to get more memory chips from each silicon wafer, primarily through process scaling and clever design
650			\|a Random access memory,Electronic circuit design,Bộ nhớ truy cập ngẫu nhiên,Thiết kế mạch điện tử
904			\|i Nguyên
980			\|a Trung tâm Học liệu Trường Đại học Cần Thơ

DRAM circuit design : Fundamentals and high-speed topics

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