Semiconductor lasers : Materials and structures
This volume presents state-of-the-art information on several important material systems and device structures employed in modern semiconductor lasers. The first two chapters discuss several III-V, II-VI, and VI-VI compound semiconductor material systems employed in diode lasers whose emission spectr...
Đã lưu trong:
| Định dạng: | Sách |
|---|---|
| Ngôn ngữ: | Undetermined |
| Được phát hành: |
San Diego, California
Academic Press
1998
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| Những chủ đề: | |
| Các nhãn: |
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| Thư viện lưu trữ: | Trung tâm Học liệu Trường Đại học Cần Thơ |
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| LEADER | 01201nam a2200205Ia 4500 | ||
|---|---|---|---|
| 001 | CTU_42219 | ||
| 008 | 210402s9999 xx 000 0 und d | ||
| 020 | |c 1194000 | ||
| 082 | |a 621.36 | ||
| 082 | |b S471/T.2 | ||
| 245 | 0 | |a Semiconductor lasers : | |
| 245 | 0 | |b Materials and structures | |
| 245 | 0 | |c Edited by Eli Kapon | |
| 260 | |a San Diego, California | ||
| 260 | |b Academic Press | ||
| 260 | |c 1998 | ||
| 520 | |a This volume presents state-of-the-art information on several important material systems and device structures employed in modern semiconductor lasers. The first two chapters discuss several III-V, II-VI, and VI-VI compound semiconductor material systems employed in diode lasers whose emission spectra cover the range from the blue to the mid-infrared. Subsequent chapters describe the elaboration of special laser structures designed for achieving narrow spectral linewidths and wavelength tunability, as well as high power emission devices. The last chapter covers the development of surface emitting diode lasers, particularly vertical cavity structures. | ||
| 650 | |a Semiconductor lasers | ||
| 904 | |i Minh, Hải | ||
| 980 | |a Trung tâm Học liệu Trường Đại học Cần Thơ | ||