APA引用形式

Bae, I., Kim, D., Kim, K., Park, H., Yu, J., & Yun, J. Investigation of AlxGa1-xAs/GaAs heterostructure by annealing at 300~800oC.

シカゴスタイル引用形

Bae, In-Ho., Dong-Lyeul Kim, Ki-Hong Kim, Hun-Bo Park, Jae-In Yu, , Jae-Gon Yun. Investigation of AlxGa1-xAs/GaAs Heterostructure By Annealing At 300~800oC.

MLA引用形式

Bae, In-Ho., et al. Investigation of AlxGa1-xAs/GaAs Heterostructure By Annealing At 300~800oC.