Gate length optimization for minimum forward voltage drop of IGBTs /

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Gate length optimization for minimum forward voltage drop of IGBTs /

Đã lưu trong:

Chi tiết về thư mục
Tác giả khác:	Choi, Yearn-Ik., Chung, Sang-Koo., Moon, Jin-Woo., Park, Dong-Wook.
Định dạng:	Bài viết
Ngôn ngữ:	English
Những chủ đề:	Forward voltage drop IGBT Surface potential
Các nhãn:	Thêm thẻ Không có thẻ, Là người đầu tiên thẻ bản ghi này!

Thư viện lưu trữ:	Thư viện Trường Đại học Đà Lạt

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