Cita APA

Birkner, A., Devi, A., Fischer, R. A., Hambrock, J., Khanderi, J., Parala, H., & Wohlfart, A. MOCVD of gallium nitride nanostructures using (N3)2Ga&(CH2)3NR2;, R= Me, Et, as a single molecule precursor: Morphology control and materials characterization.

Citación estilo Chicago

Birkner, Alexander., Anjana Devi, Roland A. Fischer, Julia Hambrock, Jayaprakash Khanderi, Harish Parala, y Andreas Wohlfart. MOCVD of Gallium Nitride Nanostructures Using (N3)2Ga&(CH2)3NR2;, R= Me, Et, As a Single Molecule Precursor: Morphology Control and Materials Characterization.

Cita MLA

Birkner, Alexander., et al. MOCVD of Gallium Nitride Nanostructures Using (N3)2Ga&(CH2)3NR2;, R= Me, Et, As a Single Molecule Precursor: Morphology Control and Materials Characterization.