Style de citation APA

Aghoram, U., Chu, M., Sun, Y., & Thompson, S. E. Strain: A solution for higher carrier mobility in nanoscale MOSFETs.

Style de citation Chicago

Aghoram, Umamaheswari., Min Chu, Yongke Sun, et Scott E. Thompson. Strain: A Solution for Higher Carrier Mobility in Nanoscale MOSFETs.

Style de citation MLA

Aghoram, Umamaheswari., Min Chu, Yongke Sun, et Scott E. Thompson. Strain: A Solution for Higher Carrier Mobility in Nanoscale MOSFETs.

Attention : ces citations peuvent ne pas être correctes à 100%.