एपीए उद्धरण

Aghoram, U., Chu, M., Sun, Y., & Thompson, S. E. Strain: A solution for higher carrier mobility in nanoscale MOSFETs.

शिकागो स्टाइल उद्धरण

Aghoram, Umamaheswari., Min Chu, Yongke Sun, और Scott E. Thompson. Strain: A Solution for Higher Carrier Mobility in Nanoscale MOSFETs.

एमएलए उद्धरण

Aghoram, Umamaheswari., Min Chu, Yongke Sun, और Scott E. Thompson. Strain: A Solution for Higher Carrier Mobility in Nanoscale MOSFETs.

चेतावनी: ये उद्धरण हमेशा 100% सटीक नहीं हो सकते हैं.