Modern semiconductor quantum physics
Includes bibliographical references.; Modern Semiconductor Quantum Physics has the following constituents: (1) energy band theory: pseudopotential method (empirical and ab initio); density functional theory; quasi-particles; LCAO method; k.p method; spin-orbit splitting; effect mass and Luttinger pa...
Đã lưu trong:
| Tác giả chính: | |
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| Định dạng: | Sách |
| Ngôn ngữ: | Undetermined |
| Được phát hành: |
Singapore
World Scientific
1994
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| Những chủ đề: | |
| Truy cập trực tuyến: | http://lrc.tdmu.edu.vn/opac/search/detail.asp?aID=2&ID=33450 |
| Các nhãn: |
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| Thư viện lưu trữ: | Trung tâm Học liệu Trường Đại học Thủ Dầu Một |
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| Tóm tắt: | Includes bibliographical references.; Modern Semiconductor Quantum Physics has the following constituents: (1) energy band theory: pseudopotential method (empirical and ab initio); density functional theory; quasi-particles; LCAO method; k.p method; spin-orbit splitting; effect mass and Luttinger parameters; strain effects and deformation potentials; temperature effects. (2) Optical properties: absorption and exciton effect; modulation spectroscopy; photo luminescence and photo luminescence excitation; Raman scattering and polaritons; photoionization. (3) Defects and Impurities: effective mass theory and shallow impurity states; deep state cluster method, super cell method,Green's function method; carrier recombination kinetics; trapping transient measurements; electron spin resonance; electron lattice interaction and lattice relaxation effects; multi-phonon nonradiative recombination; negative U center, DX center and EL2 Defects. (4) Semiconductor surfaces: two dimensional periodicity and surface reconstruction; surface electronic states; photo-electron spectroscopy; LEED, STM and other experimental methods. (5) Low-dimensional structures: Heterojunctions, quantum wells; superlattices, quantum-confined Stark effect and Wannier-Stark ladder effects; resonant tunneling, quantum Hall effect, quantum wires and quantum dots. |
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| Mô tả vật lý: | xiii, 570 p. |