Growth and characterization of heteroepitaxy ZnO thin film on sapphire substrate with ion implantation followed by thermal oxidation-some preliminary results
ZnO thin film is one of the metal oxide semiconductors which are widely used in light emitting/ laser applications. Recently, ZnO has gained a new substantial interest primarily because of its potentialities for spintronic, as predicted by Dielt et. al. [1]. Methods for fabricating ZnO include...
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| Tác giả chính: | |
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| Định dạng: | Conference object |
| Ngôn ngữ: | Vietnamese |
| Được phát hành: |
2023
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| Truy cập trực tuyến: | http://scholar.dlu.edu.vn/handle/123456789/1667 https://www.kns.org/files/pre_paper/10/575Tu%20Anh%20Trinh.pdf |
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| Thư viện lưu trữ: | Thư viện Trường Đại học Đà Lạt |
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| Tóm tắt: | ZnO thin film is one of the metal oxide
semiconductors which are widely used in light emitting/
laser applications. Recently, ZnO has gained a new
substantial interest primarily because of its potentialities
for spintronic, as predicted by Dielt et. al. [1]. Methods
for fabricating ZnO include metal-organic chemical
vapor deposition, pulsed laser deposition, electron beam
physical vapor deposition, molecular beam epitaxy, ion
implantation, etc. Among them, ion implantation has
several advantages such as easy and precise control of
the dopant concentration, elimination of the
contamination and avoidance of the secondary phase. In
the previous studies, ZnO films were formed in
transparent insulators such as silica glass SiO2 [2],
MgO [3] by several methods. In the present research,
we employed ion implantation method combined with
thermal oxidation to fabricate ZnO thin film on
sapphire substrate. X-ray diffraction (XRD) and Auger
Electron Spectroscopy (AES) were applied to
characterize the structure of these films. |
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