Tổng hợp và đặc trưng tính chất điện của tiếp giáp dị thể graphene-MoS2-graphene
With outstanding electronic and optical properties, molybdenum disulfide (MoS2) has become one of the potential materials for logic applications and photodetector. However, Schottky barrier formation based on metal-MoS2 contacts has limited device performance. Recently, many attempts have been devot...
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| Những tác giả chính: | , , , , , |
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| Formato: | Artigo |
| Idioma: | Vietnamese |
| Publicado em: |
2025
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| Assuntos: | |
| Acesso em linha: | https://scholar.dlu.edu.vn/thuvienso/handle/DLU123456789/290707 |
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| Thư viện lưu trữ: | Thư viện Trường Đại học Đà Lạt |
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| Resumo: | With outstanding electronic and optical properties, molybdenum disulfide (MoS2) has become one of the potential materials for logic applications and photodetector. However, Schottky barrier formation based on metal-MoS2 contacts has limited device performance. Recently, many attempts have been devoted to addressing this challenge by using low-work function metal electrodes, high-temperature annealing, or phase engineering. Graphene is known as an ideal electrode for the interconnections and wiring of next-generation devices due to its superior electrical conductivity and ease of tuning its Fermi level. In this study, we successfully fabricated graphene-MoS2 lateral heterostructure by the chemical vapour deposition (CVD) technique under atmospheric pressure, in which, the edges of the graphene template served as nucleation sites for the growth of MoS2. The morphology of the heterojunction was confirmed by optical microscopy and atomic force microscopy. Raman and Raman mapping were used to estimate the quality and uniformity of the heterojunction. The device fabricated on the graphene-MoS2 heterojunction exhibits n-type semiconductor transport characteristics, with MoS2 serving as the conducting channel while graphene acts as the electrode. Additionally, the output characterisation showed that there is a formation of an ohmic contact between graphene and MoS2. |
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