Tổng hợp và đặc trưng tính chất điện của tiếp giáp dị thể graphene-MoS2-graphene
With outstanding electronic and optical properties, molybdenum disulfide (MoS2) has become one of the potential materials for logic applications and photodetector. However, Schottky barrier formation based on metal-MoS2 contacts has limited device performance. Recently, many attempts have been devot...
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oai:scholar.dlu.edu.vn:DLU123456789-2907072025-09-27T10:44:39Z Tổng hợp và đặc trưng tính chất điện của tiếp giáp dị thể graphene-MoS2-graphene Nguyen, Thi Huyen Tran, Van Hau Pham, Van Nhat Phung, Viet Tiep Vu, Dinh Lam Park, Ji-Yong Tạp chí Khoa học và Công nghệ Việt Nam - B With outstanding electronic and optical properties, molybdenum disulfide (MoS2) has become one of the potential materials for logic applications and photodetector. However, Schottky barrier formation based on metal-MoS2 contacts has limited device performance. Recently, many attempts have been devoted to addressing this challenge by using low-work function metal electrodes, high-temperature annealing, or phase engineering. Graphene is known as an ideal electrode for the interconnections and wiring of next-generation devices due to its superior electrical conductivity and ease of tuning its Fermi level. In this study, we successfully fabricated graphene-MoS2 lateral heterostructure by the chemical vapour deposition (CVD) technique under atmospheric pressure, in which, the edges of the graphene template served as nucleation sites for the growth of MoS2. The morphology of the heterojunction was confirmed by optical microscopy and atomic force microscopy. Raman and Raman mapping were used to estimate the quality and uniformity of the heterojunction. The device fabricated on the graphene-MoS2 heterojunction exhibits n-type semiconductor transport characteristics, with MoS2 serving as the conducting channel while graphene acts as the electrode. Additionally, the output characterisation showed that there is a formation of an ohmic contact between graphene and MoS2. 2025-08-15T06:33:05Z 2025-08-15T06:33:05Z 2025 Article https://scholar.dlu.edu.vn/thuvienso/handle/DLU123456789/290707 vi Tạp chí Khoa học và Công nghệ Việt Nam - B - 2025 - Số 3B - tr. 1-1 application/pdf |
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Thư viện Trường Đại học Đà Lạt |
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| language |
Vietnamese |
| topic |
Tạp chí Khoa học và Công nghệ Việt Nam - B |
| spellingShingle |
Tạp chí Khoa học và Công nghệ Việt Nam - B Nguyen, Thi Huyen Tran, Van Hau Pham, Van Nhat Phung, Viet Tiep Vu, Dinh Lam Park, Ji-Yong Tổng hợp và đặc trưng tính chất điện của tiếp giáp dị thể graphene-MoS2-graphene |
| description |
With outstanding electronic and optical properties, molybdenum disulfide (MoS2) has become one of the potential materials for logic applications and photodetector. However, Schottky barrier formation based on metal-MoS2 contacts has limited device performance. Recently, many attempts have been devoted to addressing this challenge by using low-work function metal electrodes, high-temperature annealing, or phase engineering. Graphene is known as an ideal electrode for the interconnections and wiring of next-generation devices due to its superior electrical conductivity and ease of tuning its Fermi level. In this study, we successfully fabricated graphene-MoS2 lateral heterostructure by the chemical vapour deposition (CVD) technique under atmospheric pressure, in which, the edges of the graphene template served as nucleation sites for the growth of MoS2. The morphology of the heterojunction was confirmed by optical microscopy and atomic force microscopy. Raman and Raman mapping were used to estimate the quality and uniformity of the heterojunction. The device fabricated on the graphene-MoS2 heterojunction exhibits n-type semiconductor transport characteristics, with MoS2 serving as the conducting channel while graphene acts as the electrode. Additionally, the output characterisation showed that there is a formation of an ohmic contact between graphene and MoS2. |
| format |
Article |
| author |
Nguyen, Thi Huyen Tran, Van Hau Pham, Van Nhat Phung, Viet Tiep Vu, Dinh Lam Park, Ji-Yong |
| author_facet |
Nguyen, Thi Huyen Tran, Van Hau Pham, Van Nhat Phung, Viet Tiep Vu, Dinh Lam Park, Ji-Yong |
| author_sort |
Nguyen, Thi Huyen |
| title |
Tổng hợp và đặc trưng tính chất điện của tiếp giáp dị thể graphene-MoS2-graphene |
| title_short |
Tổng hợp và đặc trưng tính chất điện của tiếp giáp dị thể graphene-MoS2-graphene |
| title_full |
Tổng hợp và đặc trưng tính chất điện của tiếp giáp dị thể graphene-MoS2-graphene |
| title_fullStr |
Tổng hợp và đặc trưng tính chất điện của tiếp giáp dị thể graphene-MoS2-graphene |
| title_full_unstemmed |
Tổng hợp và đặc trưng tính chất điện của tiếp giáp dị thể graphene-MoS2-graphene |
| title_sort |
tổng hợp và đặc trưng tính chất điện của tiếp giáp dị thể graphene-mos2-graphene |
| publishDate |
2025 |
| url |
https://scholar.dlu.edu.vn/thuvienso/handle/DLU123456789/290707 |
| _version_ |
1845419433394176000 |