Heavily-Doped 2D-Quantized Structures and the Einstein Relation

This book presents the Einstein Relation(ER) in two-dimensional (2-D) Heavily Doped (HD) Quantized Structures. The materials considered are quantized structures of HD non-linear optical, III-V, II-VI, Ge, Te, Platinum Antimonide, stressed materials, GaP, Gallium Antimonide, II-V, Bismuth Telluride t...

Mô tả đầy đủ

Đã lưu trong:
Chi tiết về thư mục
Những tác giả chính: P. Ghatak, Kamakhya, Bhattacharya, Sitangshu
Định dạng: Sách
Ngôn ngữ:English
Được phát hành: Springer 2016
Những chủ đề:
Truy cập trực tuyến:https://scholar.dlu.edu.vn/thuvienso/handle/DLU123456789/59682
Các nhãn: Thêm thẻ
Không có thẻ, Là người đầu tiên thẻ bản ghi này!
Thư viện lưu trữ: Thư viện Trường Đại học Đà Lạt
id oai:scholar.dlu.edu.vn:DLU123456789-59682
record_format dspace
spelling oai:scholar.dlu.edu.vn:DLU123456789-596822023-11-11T06:48:04Z Heavily-Doped 2D-Quantized Structures and the Einstein Relation P. Ghatak, Kamakhya Bhattacharya, Sitangshu Solid State Physics Nanotechnology Doped semiconductors This book presents the Einstein Relation(ER) in two-dimensional (2-D) Heavily Doped (HD) Quantized Structures. The materials considered are quantized structures of HD non-linear optical, III-V, II-VI, Ge, Te, Platinum Antimonide, stressed materials, GaP, Gallium Antimonide, II-V, Bismuth Telluride together with various types of HD superlattices and their Quantized counterparts respectively. The ER in HD opto-electronic materials and their nanostructures is studied in the presence of strong light waves and intense electric fields on the basis of newly formulated electron dispersion laws that control the studies of such quantum effect devices. The suggestion for the experimental determination of HD 2D and 3D ERs and the importance of measurement of band gap in HD optoelectronic materials under intense built-in electric field in nanodevices and strong external photo excitation (for measuring photon induced physical properties) are also discussed in this context. The influence of crossed electric and quantizing magnetic fields on the ER of the different 2D HD quantized structures (quantum wells, inversion and accumulation layers, quantum well HD superlattices and nipi structures) under different physical conditions is discussed in detail. This monograph contains 100 open research problems which form the integral part of the text and are useful for both Ph.D aspirants and researchers in the fields of condensed matter physics, solid-state sciences, materials science, nano-science and technology and allied fields. 2016-02-24T02:52:01Z 2016-02-24T02:52:01Z 2015 Book 978-3-319-08380-3 978-3-319-08379-7 https://scholar.dlu.edu.vn/thuvienso/handle/DLU123456789/59682 en application/pdf Springer
institution Thư viện Trường Đại học Đà Lạt
collection Thư viện số
language English
topic Solid State Physics
Nanotechnology
Doped semiconductors
spellingShingle Solid State Physics
Nanotechnology
Doped semiconductors
P. Ghatak, Kamakhya
Bhattacharya, Sitangshu
Heavily-Doped 2D-Quantized Structures and the Einstein Relation
description This book presents the Einstein Relation(ER) in two-dimensional (2-D) Heavily Doped (HD) Quantized Structures. The materials considered are quantized structures of HD non-linear optical, III-V, II-VI, Ge, Te, Platinum Antimonide, stressed materials, GaP, Gallium Antimonide, II-V, Bismuth Telluride together with various types of HD superlattices and their Quantized counterparts respectively. The ER in HD opto-electronic materials and their nanostructures is studied in the presence of strong light waves and intense electric fields on the basis of newly formulated electron dispersion laws that control the studies of such quantum effect devices. The suggestion for the experimental determination of HD 2D and 3D ERs and the importance of measurement of band gap in HD optoelectronic materials under intense built-in electric field in nanodevices and strong external photo excitation (for measuring photon induced physical properties) are also discussed in this context. The influence of crossed electric and quantizing magnetic fields on the ER of the different 2D HD quantized structures (quantum wells, inversion and accumulation layers, quantum well HD superlattices and nipi structures) under different physical conditions is discussed in detail. This monograph contains 100 open research problems which form the integral part of the text and are useful for both Ph.D aspirants and researchers in the fields of condensed matter physics, solid-state sciences, materials science, nano-science and technology and allied fields.
format Book
author P. Ghatak, Kamakhya
Bhattacharya, Sitangshu
author_facet P. Ghatak, Kamakhya
Bhattacharya, Sitangshu
author_sort P. Ghatak, Kamakhya
title Heavily-Doped 2D-Quantized Structures and the Einstein Relation
title_short Heavily-Doped 2D-Quantized Structures and the Einstein Relation
title_full Heavily-Doped 2D-Quantized Structures and the Einstein Relation
title_fullStr Heavily-Doped 2D-Quantized Structures and the Einstein Relation
title_full_unstemmed Heavily-Doped 2D-Quantized Structures and the Einstein Relation
title_sort heavily-doped 2d-quantized structures and the einstein relation
publisher Springer
publishDate 2016
url https://scholar.dlu.edu.vn/thuvienso/handle/DLU123456789/59682
_version_ 1819811591258898432