Silicon germanium : Technology, modeling, and design
This volume provides an excellent introduction to the SiGe BiCMOS technology, from the underlying device physics to current applications. But just as important is the window the text provides into the infrastructure–the process development, device modeling, and tool development.
Wedi'i Gadw mewn:
| Prif Awdur: | |
|---|---|
| Fformat: | Llyfr |
| Iaith: | Undetermined |
| Cyhoeddwyd: |
Hoboken, NJ.
Wiley-Interscience
2004
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| Pynciau: | |
| Tagiau: |
Ychwanegu Tag
Dim Tagiau, Byddwch y cyntaf i dagio'r cofnod hwn!
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| Thư viện lưu trữ: | Trung tâm Học liệu Trường Đại học Cần Thơ |
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| LEADER | 00881nam a2200217Ia 4500 | ||
|---|---|---|---|
| 001 | CTU_162344 | ||
| 008 | 210402s9999 xx 000 0 und d | ||
| 020 | |c 141.07 | ||
| 082 | |a 621.39732 | ||
| 082 | |b S617 | ||
| 100 | |a Singh, Raminderpal | ||
| 245 | 0 | |a Silicon germanium : | |
| 245 | 0 | |b Technology, modeling, and design | |
| 245 | 0 | |c Raminderpal Singh, David Harame, Modest M. Oprysko | |
| 260 | |a Hoboken, NJ. | ||
| 260 | |b Wiley-Interscience | ||
| 260 | |c 2004 | ||
| 520 | |a This volume provides an excellent introduction to the SiGe BiCMOS technology, from the underlying device physics to current applications. But just as important is the window the text provides into the infrastructure–the process development, device modeling, and tool development. | ||
| 650 | |a Silicon,Germanium | ||
| 904 | |i Qhieu | ||
| 980 | |a Trung tâm Học liệu Trường Đại học Cần Thơ | ||