Silicon germanium : Technology, modeling, and design
This volume provides an excellent introduction to the SiGe BiCMOS technology, from the underlying device physics to current applications. But just as important is the window the text provides into the infrastructure–the process development, device modeling, and tool development.
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| Hlavní autor: | |
|---|---|
| Médium: | Kniha |
| Jazyk: | Undetermined |
| Vydáno: |
Hoboken, NJ.
Wiley-Interscience
2004
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| Thư viện lưu trữ: | Trung tâm Học liệu Trường Đại học Cần Thơ |
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| LEADER | 00881nam a2200217Ia 4500 | ||
|---|---|---|---|
| 001 | CTU_162344 | ||
| 008 | 210402s9999 xx 000 0 und d | ||
| 020 | |c 141.07 | ||
| 082 | |a 621.39732 | ||
| 082 | |b S617 | ||
| 100 | |a Singh, Raminderpal | ||
| 245 | 0 | |a Silicon germanium : | |
| 245 | 0 | |b Technology, modeling, and design | |
| 245 | 0 | |c Raminderpal Singh, David Harame, Modest M. Oprysko | |
| 260 | |a Hoboken, NJ. | ||
| 260 | |b Wiley-Interscience | ||
| 260 | |c 2004 | ||
| 520 | |a This volume provides an excellent introduction to the SiGe BiCMOS technology, from the underlying device physics to current applications. But just as important is the window the text provides into the infrastructure–the process development, device modeling, and tool development. | ||
| 650 | |a Silicon,Germanium | ||
| 904 | |i Qhieu | ||
| 980 | |a Trung tâm Học liệu Trường Đại học Cần Thơ | ||