Silicon germanium :

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Silicon germanium : Technology, modeling, and design

This volume provides an excellent introduction to the SiGe BiCMOS technology, from the underlying device physics to current applications. But just as important is the window the text provides into the infrastructure–the process development, device modeling, and tool development.

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Библиографические подробности
Главный автор:	Singh, Raminderpal
Формат:	‌
Язык:	Undetermined
Опубликовано:	Hoboken, NJ. Wiley-Interscience 2004
Предметы:	Silicon,Germanium
Метки:	Добавить метку Нет меток, Требуется 1-ая метка записи!

Thư viện lưu trữ:	Trung tâm Học liệu Trường Đại học Cần Thơ

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