Silicon germanium :

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Silicon germanium : Technology, modeling, and design

This volume provides an excellent introduction to the SiGe BiCMOS technology, from the underlying device physics to current applications. But just as important is the window the text provides into the infrastructure–the process development, device modeling, and tool development.

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Dades bibliogràfiques
Autor principal:	Singh, Raminderpal
Format:	Llibre
Idioma:	Undetermined
Publicat:	Hoboken, NJ. Wiley-Interscience 2004
Matèries:	Silicon,Germanium
Etiquetes:	Afegir etiqueta Sense etiquetes, Sigues el primer a etiquetar aquest registre!

Thư viện lưu trữ:	Trung tâm Học liệu Trường Đại học Cần Thơ

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