Effective Irradiation for Sprout Inhibition of Onion and Potato by Low Energy X-rays

The sprout inhibition of onion and potato by low energy X-rays was investigated using a 160 kV X-ray irradiation system to determine optimal irradiation conditions. The sprouting of onion was effectively suppressed by irradiating 20 Gy at a depth of 3.2 mm from root side for small onion and at 8.0...

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Những tác giả chính: Nguyễn, Thị Nguyệt H, Nguyễn, Thị Thùy Linh, Nguyễn, An Sơn, Nguyễn, Thị Minh Sang, Phạm, Thị Ngọc H, Lê, Đoàn Đình Đức, Tamikazu Kume
Định dạng: Research article
Ngôn ngữ:English
Được phát hành: Japan Radioisotope Association 2023
Những chủ đề:
Truy cập trực tuyến:https://scholar.dlu.edu.vn/handle/123456789/2801
Các nhãn: Thêm thẻ
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Tóm tắt:The sprout inhibition of onion and potato by low energy X-rays was investigated using a 160 kV X-ray irradiation system to determine optimal irradiation conditions. The sprouting of onion was effectively suppressed by irradiating 20 Gy at a depth of 3.2 mm from root side for small onion and at 8.0 mm depth for large onion, respectively. For potato, double-sided irradiation was necessary to irradiate the entire potato because the buds were distributed throughout the entire potato. Irradiation on double-sided at a depth of 8.0 mm with 50 Gy (60 Gy at 5.4 mm) effectively inhibited the sprouting. The throughput calculated to be 80.9 kg/h for large onion, 34.1 kg/h for small onion, and 9.9 kg/h for potato at a distance of 350 mm from the focal point of source. Dose uniformity (Dmax at surface/Dmin at 8.0 mm depth) of potato in case of double-sided irradiation was improved from 3.6 (182 Gy/50 Gy) to 1.2 (58 Gy/50 Gy) by using an aluminum 1.0 mm filter (F1) to cut off low energy X-rays, whereas the throughput capacity decreased from 9.9 kg/h to 7.4 kg/h.