RECONSTRUCTION OF DIVACANCY IN ZIGZAG-BUCKLED SILICENE NANORIBBONS
In this study, we use a tight binding model to investigate structural and electronic changes in zigzag-buckled silicene nanoribbons (ZBSiNRs) with two vacancies at different positions. We divide the defects into two categories based on a difference in geometric properties. The results show that the...
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| Những tác giả chính: | , , , , |
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| Định dạng: | Bài viết |
| Ngôn ngữ: | English |
| Được phát hành: |
Trường Đại học Đà Lạt
2024
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| Những chủ đề: | |
| Truy cập trực tuyến: | https://scholar.dlu.edu.vn/thuvienso/handle/DLU123456789/256916 https://tckh.dlu.edu.vn/index.php/tckhdhdl/article/view/1232 |
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| Thư viện lưu trữ: | Thư viện Trường Đại học Đà Lạt |
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| Tóm tắt: | In this study, we use a tight binding model to investigate structural and electronic changes in zigzag-buckled silicene nanoribbons (ZBSiNRs) with two vacancies at different positions. We divide the defects into two categories based on a difference in geometric properties. The results show that the first- and second-order interaction parameters of two atoms of the same type play an important role in the electronic properties of this material. Vacancies near the edge have a stronger effect than those near the center of the ribbons. We further show that each type of divacancy will give a different result under the influence of a perpendicular electric field. This is a favorable condition for controlling the conductive state of materials in future applications in the semiconductor and thermoelectric industries. |
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