RECONSTRUCTION OF DIVACANCY IN ZIGZAG-BUCKLED SILICENE NANORIBBONS
In this study, we use a tight binding model to investigate structural and electronic changes in zigzag-buckled silicene nanoribbons (ZBSiNRs) with two vacancies at different positions. We divide the defects into two categories based on a difference in geometric properties. The results show that the...
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Trường Đại học Đà Lạt
2024
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oai:scholar.dlu.edu.vn:DLU123456789-2569162024-12-29T01:13:09Z RECONSTRUCTION OF DIVACANCY IN ZIGZAG-BUCKLED SILICENE NANORIBBONS Ngo, Van Chinh Pham, Nguyen Huu Hanh Nguyen, Thi Kim Quyen Phan, Thi Kim Loan Vu, Thanh Tra Buckled silicene nanoribbons Divacancy Electric field Electronic structure Tight binding In this study, we use a tight binding model to investigate structural and electronic changes in zigzag-buckled silicene nanoribbons (ZBSiNRs) with two vacancies at different positions. We divide the defects into two categories based on a difference in geometric properties. The results show that the first- and second-order interaction parameters of two atoms of the same type play an important role in the electronic properties of this material. Vacancies near the edge have a stronger effect than those near the center of the ribbons. We further show that each type of divacancy will give a different result under the influence of a perpendicular electric field. This is a favorable condition for controlling the conductive state of materials in future applications in the semiconductor and thermoelectric industries. 2024-12-29T00:39:24Z 2024-12-29T00:39:24Z 2024 Article 0866-787X https://scholar.dlu.edu.vn/thuvienso/handle/DLU123456789/256916 https://tckh.dlu.edu.vn/index.php/tckhdhdl/article/view/1232 10.37569/DalatUniversity.14.3S.1232(2024) en Dalat University Journal of Science, Volume 14, Issue 3S; p.17-29 application/pdf Trường Đại học Đà Lạt |
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English |
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Buckled silicene nanoribbons Divacancy Electric field Electronic structure Tight binding |
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Buckled silicene nanoribbons Divacancy Electric field Electronic structure Tight binding Ngo, Van Chinh Pham, Nguyen Huu Hanh Nguyen, Thi Kim Quyen Phan, Thi Kim Loan Vu, Thanh Tra RECONSTRUCTION OF DIVACANCY IN ZIGZAG-BUCKLED SILICENE NANORIBBONS |
description |
In this study, we use a tight binding model to investigate structural and electronic changes in zigzag-buckled silicene nanoribbons (ZBSiNRs) with two vacancies at different positions. We divide the defects into two categories based on a difference in geometric properties. The results show that the first- and second-order interaction parameters of two atoms of the same type play an important role in the electronic properties of this material. Vacancies near the edge have a stronger effect than those near the center of the ribbons. We further show that each type of divacancy will give a different result under the influence of a perpendicular electric field. This is a favorable condition for controlling the conductive state of materials in future applications in the semiconductor and thermoelectric industries. |
format |
Article |
author |
Ngo, Van Chinh Pham, Nguyen Huu Hanh Nguyen, Thi Kim Quyen Phan, Thi Kim Loan Vu, Thanh Tra |
author_facet |
Ngo, Van Chinh Pham, Nguyen Huu Hanh Nguyen, Thi Kim Quyen Phan, Thi Kim Loan Vu, Thanh Tra |
author_sort |
Ngo, Van Chinh |
title |
RECONSTRUCTION OF DIVACANCY IN ZIGZAG-BUCKLED SILICENE NANORIBBONS |
title_short |
RECONSTRUCTION OF DIVACANCY IN ZIGZAG-BUCKLED SILICENE NANORIBBONS |
title_full |
RECONSTRUCTION OF DIVACANCY IN ZIGZAG-BUCKLED SILICENE NANORIBBONS |
title_fullStr |
RECONSTRUCTION OF DIVACANCY IN ZIGZAG-BUCKLED SILICENE NANORIBBONS |
title_full_unstemmed |
RECONSTRUCTION OF DIVACANCY IN ZIGZAG-BUCKLED SILICENE NANORIBBONS |
title_sort |
reconstruction of divacancy in zigzag-buckled silicene nanoribbons |
publisher |
Trường Đại học Đà Lạt |
publishDate |
2024 |
url |
https://scholar.dlu.edu.vn/thuvienso/handle/DLU123456789/256916 https://tckh.dlu.edu.vn/index.php/tckhdhdl/article/view/1232 |
_version_ |
1819819528118337536 |