Semiconductor quantum dots
The book develops the theoretical background material for the analysis of carrier quantum-confinement effects, it introduces different confinement regimes for absolute or center-of-mass motion quantization of the electron-hole-pairs, and it gives an overview of the best approximation schemes for eac...
Đã lưu trong:
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| Định dạng: | Sách |
| Ngôn ngữ: | Undetermined |
| Được phát hành: |
Singapore
World Scientific
1993
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| Những chủ đề: | |
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| Thư viện lưu trữ: | Trung tâm Học liệu Trường Đại học Cần Thơ |
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| Tóm tắt: | The book develops the theoretical background material for the analysis of carrier quantum-confinement effects, it introduces different confinement regimes for absolute or center-of-mass motion quantization of the electron-hole-pairs, and it gives an overview of the best approximation schemes for each regime. A detailed discussion of the carrier states in quantum dots is presented, including variational calculations, a configuration interaction approach, and quantum Monte Carlo techniques. Surface polarization instabilities are analyzed which lead to the self-trapping of carriers near the surface of the dots and the influence of spin-orbit coupling on the quantum-confined carrier states is discussed. The linear and nonlinear optical properties of small and large quantum dots are analyzed in detail, including transient optical nonlinearities (photon echo) and two-photon transitions. The influence of the quantum-dot size distribution in many realistic samples is outlined, including the analysis of quantum dot growth laws and universal size distributions. |
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