Semiconductor quantum dots

The book develops the theoretical background material for the analysis of carrier quantum-confinement effects, it introduces different confinement regimes for absolute or center-of-mass motion quantization of the electron-hole-pairs, and it gives an overview of the best approximation schemes for eac...

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Chi tiết về thư mục
Tác giả chính: Bányai, L.
Định dạng: Sách
Ngôn ngữ:Undetermined
Được phát hành: Singapore World Scientific 1993
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Thư viện lưu trữ: Trung tâm Học liệu Trường Đại học Cần Thơ
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008 210402s9999 xx 000 0 und d
020 |c 55.41 
082 |a 537.6226 
082 |b B212 
100 |a Bányai, L. 
245 0 |a Semiconductor quantum dots 
245 0 |c L. Bányai, S. W. Koch 
260 |a Singapore 
260 |b World Scientific 
260 |c 1993 
520 |a The book develops the theoretical background material for the analysis of carrier quantum-confinement effects, it introduces different confinement regimes for absolute or center-of-mass motion quantization of the electron-hole-pairs, and it gives an overview of the best approximation schemes for each regime. A detailed discussion of the carrier states in quantum dots is presented, including variational calculations, a configuration interaction approach, and quantum Monte Carlo techniques. Surface polarization instabilities are analyzed which lead to the self-trapping of carriers near the surface of the dots and the influence of spin-orbit coupling on the quantum-confined carrier states is discussed. The linear and nonlinear optical properties of small and large quantum dots are analyzed in detail, including transient optical nonlinearities (photon echo) and two-photon transitions. The influence of the quantum-dot size distribution in many realistic samples is outlined, including the analysis of quantum dot growth laws and universal size distributions. 
650 |a Semiconductors,Quantum electronics,Chất bán dẫn,Điện tử lượng tử 
650 |x Optical properties,Thuộc tính quang học 
904 |i Qhieu 
980 |a Trung tâm Học liệu Trường Đại học Cần Thơ