Semiconductor quantum dots
The book develops the theoretical background material for the analysis of carrier quantum-confinement effects, it introduces different confinement regimes for absolute or center-of-mass motion quantization of the electron-hole-pairs, and it gives an overview of the best approximation schemes for eac...
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Tác giả chính: | |
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Định dạng: | Sách |
Ngôn ngữ: | Undetermined |
Được phát hành: |
Singapore
World Scientific
1993
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Những chủ đề: | |
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Thư viện lưu trữ: | Trung tâm Học liệu Trường Đại học Cần Thơ |
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LEADER | 01725nam a2200217Ia 4500 | ||
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001 | CTU_210727 | ||
008 | 210402s9999 xx 000 0 und d | ||
020 | |c 55.41 | ||
082 | |a 537.6226 | ||
082 | |b B212 | ||
100 | |a Bányai, L. | ||
245 | 0 | |a Semiconductor quantum dots | |
245 | 0 | |c L. Bányai, S. W. Koch | |
260 | |a Singapore | ||
260 | |b World Scientific | ||
260 | |c 1993 | ||
520 | |a The book develops the theoretical background material for the analysis of carrier quantum-confinement effects, it introduces different confinement regimes for absolute or center-of-mass motion quantization of the electron-hole-pairs, and it gives an overview of the best approximation schemes for each regime. A detailed discussion of the carrier states in quantum dots is presented, including variational calculations, a configuration interaction approach, and quantum Monte Carlo techniques. Surface polarization instabilities are analyzed which lead to the self-trapping of carriers near the surface of the dots and the influence of spin-orbit coupling on the quantum-confined carrier states is discussed. The linear and nonlinear optical properties of small and large quantum dots are analyzed in detail, including transient optical nonlinearities (photon echo) and two-photon transitions. The influence of the quantum-dot size distribution in many realistic samples is outlined, including the analysis of quantum dot growth laws and universal size distributions. | ||
650 | |a Semiconductors,Quantum electronics,Chất bán dẫn,Điện tử lượng tử | ||
650 | |x Optical properties,Thuộc tính quang học | ||
904 | |i Qhieu | ||
980 | |a Trung tâm Học liệu Trường Đại học Cần Thơ |