Bandgap-dependent onset behavior of output characteristics in line-tunneling field-effect transistors
The onset behavior of output characteristics in tunnel field-effect transistors (TFETs) importantly determines the performance of digital TFET-based circuits. In this paper, we analytically and numerically examine the dependence of the onset behavior of output characteristics on the bandgap of semic...
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Thư viện Trường Đại học Đà Lạt |
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Superlinear onset output characteristic line-tunneling band-to-band tunneling low-bandgap material tunnel field-effect transistor (TFET) |
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Superlinear onset output characteristic line-tunneling band-to-band tunneling low-bandgap material tunnel field-effect transistor (TFET) Chun-Hsing Shih Nguyễn, Đăng Chiến Bandgap-dependent onset behavior of output characteristics in line-tunneling field-effect transistors |
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The onset behavior of output characteristics in tunnel field-effect transistors (TFETs) importantly determines the performance of digital TFET-based circuits. In this paper, we analytically and numerically examine the dependence of the onset behavior of output characteristics on the bandgap of semiconductors in line-tunneling TFETs. The qualitative and quantitative analyses show that the output onset behavior in line-tunneling TFETs strongly depends on the bandgap because the roles of two factors, including the incident electron number and tunneling probability, in determining the variation of tunneling current under increasing drain voltage change oppositely when varying the bandgap. Particularly, the superlinear onset in line-tunneling TFETs can be effectively suppressed to reduce the saturation drain voltage by using low-bandgap semiconductors. Together with the advantages in on-current and subthreshold swing as shown previously, the significant superiority in output characteristic makes the use of low-bandgap materials to be an efficient approach for simultaneously enhancing the device and circuit performances of advanced line-tunneling TFETs. |
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Journal article |
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Chun-Hsing Shih Nguyễn, Đăng Chiến |
| author_facet |
Chun-Hsing Shih Nguyễn, Đăng Chiến |
| author_sort |
Chun-Hsing Shih |
| title |
Bandgap-dependent onset behavior of output characteristics in line-tunneling field-effect transistors |
| title_short |
Bandgap-dependent onset behavior of output characteristics in line-tunneling field-effect transistors |
| title_full |
Bandgap-dependent onset behavior of output characteristics in line-tunneling field-effect transistors |
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Bandgap-dependent onset behavior of output characteristics in line-tunneling field-effect transistors |
| title_full_unstemmed |
Bandgap-dependent onset behavior of output characteristics in line-tunneling field-effect transistors |
| title_sort |
bandgap-dependent onset behavior of output characteristics in line-tunneling field-effect transistors |
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2023 |
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https://scholar.dlu.edu.vn/handle/123456789/2075 |
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1785973035084283904 |
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oai:scholar.dlu.edu.vn:123456789-20752023-12-13T04:20:54Z Bandgap-dependent onset behavior of output characteristics in line-tunneling field-effect transistors Chun-Hsing Shih Nguyễn, Đăng Chiến Superlinear onset output characteristic line-tunneling band-to-band tunneling low-bandgap material tunnel field-effect transistor (TFET) The onset behavior of output characteristics in tunnel field-effect transistors (TFETs) importantly determines the performance of digital TFET-based circuits. In this paper, we analytically and numerically examine the dependence of the onset behavior of output characteristics on the bandgap of semiconductors in line-tunneling TFETs. The qualitative and quantitative analyses show that the output onset behavior in line-tunneling TFETs strongly depends on the bandgap because the roles of two factors, including the incident electron number and tunneling probability, in determining the variation of tunneling current under increasing drain voltage change oppositely when varying the bandgap. Particularly, the superlinear onset in line-tunneling TFETs can be effectively suppressed to reduce the saturation drain voltage by using low-bandgap semiconductors. Together with the advantages in on-current and subthreshold swing as shown previously, the significant superiority in output characteristic makes the use of low-bandgap materials to be an efficient approach for simultaneously enhancing the device and circuit performances of advanced line-tunneling TFETs. 16 3 696-703 2023-04-28T09:26:05Z 2023-04-28T09:26:05Z 2017 Journal article Bài báo đăng trên tạp chí thuộc ISI, bao gồm book chapter https://scholar.dlu.edu.vn/handle/123456789/2075 10.1007/s10825-017-1020-9 en Vietnam National Foundation for Science and Technology Development (NAFOSTED) Journal of Computational Electronics 1569-8025 103.02-2015.58 [1] Choi, W.Y., Park, B.-G., Lee, J.D., Liu, T.-J.K.: Tunneling field-effect transistors (TFETs) with subthreshold swing (SS) less than 60 mV/dec. IEEE Electron Device Lett 28, 743-745 (2007) [2] Ionescu, A.M., Riel, H.: Tunnel field-effect transistors as energy-efficient electronic switches. 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