Design and modeling of line-tunneling field-effect transistors using low bandgap semiconductors
The low-bandgap engineering and line-tunneling architecture are the two major techniques to resolve the ON-current issues of tunnel field-effect transistors (TFETs). This paper elucidates the design and modeling of line-tunneling TFETs using low-bandgap materials. Three semiconductors, Ge, InAs, and...
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| Hlavní autoři: | , |
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| Médium: | Journal article |
| Jazyk: | English |
| Vydáno: |
IEEE Publishing
2024
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| On-line přístup: | https://scholar.dlu.edu.vn/handle/123456789/3291 |
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| Thư viện lưu trữ: | Thư viện Trường Đại học Đà Lạt |
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