Bandgap-dependent onset behavior of output characteristics in line-tunneling field-effect transistors
The onset behavior of output characteristics in tunnel field-effect transistors (TFETs) importantly determines the performance of digital TFET-based circuits. In this paper, we analytically and numerically examine the dependence of the onset behavior of output characteristics on the bandgap of semic...
Uloženo v:
Hlavní autoři: | , |
---|---|
Médium: | Journal article |
Jazyk: | English |
Vydáno: |
2023
|
Témata: | |
On-line přístup: | https://scholar.dlu.edu.vn/handle/123456789/2075 |
Tagy: |
Přidat tag
Žádné tagy, Buďte první, kdo otaguje tento záznam!
|
Thư viện lưu trữ: | Thư viện Trường Đại học Đà Lạt |
---|