A VERY LOW BANDGAP LINE-TUNNEL FIELD EFFECT TRANSISTOR WITH CHANNEL-BURIED OXIDE AND LATERALLY DOPED POCKET

Low bandgap and line tunneling techniques have demonstrated the most effectiveness in enhancing the on-current of tunnel field-effect transistors (TFETs). This study examines the mechanisms and designs of channel-buried oxide and a laterally doped pocket for a very low bandgap line-TFET. Numerical T...

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Những tác giả chính:	Bui, Huu Thai, Shih, Chun-Hsing, Nguyen, Dang Chien
Định dạng:	Bài viết
Ngôn ngữ:	English
Được phát hành:	Trường Đại học Đà Lạt 2024
Những chủ đề:	Band-to-band tunneling Channel-buried oxide Doping pocket Line tunneling Low bandgap TFET
Truy cập trực tuyến:	https://scholar.dlu.edu.vn/thuvienso/handle/DLU123456789/256919 https://tckh.dlu.edu.vn/index.php/tckhdhdl/article/view/1313
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spelling	oai:scholar.dlu.edu.vn:DLU123456789-2569192024-12-29T08:58:39Z A VERY LOW BANDGAP LINE-TUNNEL FIELD EFFECT TRANSISTOR WITH CHANNEL-BURIED OXIDE AND LATERALLY DOPED POCKET Bui, Huu Thai Shih, Chun-Hsing Nguyen, Dang Chien Band-to-band tunneling Channel-buried oxide Doping pocket Line tunneling Low bandgap TFET Low bandgap and line tunneling techniques have demonstrated the most effectiveness in enhancing the on-current of tunnel field-effect transistors (TFETs). This study examines the mechanisms and designs of channel-buried oxide and a laterally doped pocket for a very low bandgap line-TFET. Numerical TCAD simulations show that the channel-buried oxide is needed to prevent off-state lateral tunneling while still maintaining the on-state vertical tunneling. The buried oxide pillar should be high so that the channel is thin, about 10 nm thick, to completely suppress the tunneling leakage. The dopant pocket is required to trigger the line tunneling earlier than the point tunneling to improve the subthreshold swing and on-current. Increasing the pocket concentration or decreasing the pocket thickness both cause an increase not only in the vertical band bending but also in the effective gate-insulator thickness. Because of the trade-off between these two operation parameters, for a given thickness/concentration, there exists an optimal concentration/thickness of the pocket to maximize the on-current. The on-current is optimized using a heavy, thin pocket, for which the band bending is maximized and the effective gate-insulator thickness is minimized. For the fabrication feasibility using existing doping techniques, the pocket concentration and thickness should be 1019 cm-3 and 4 nm, respectively, to maximize the on-current of the InAs line-TFET. 2024-12-29T00:39:25Z 2024-12-29T00:39:25Z 2024 Article 0866-787X https://scholar.dlu.edu.vn/thuvienso/handle/DLU123456789/256919 https://tckh.dlu.edu.vn/index.php/tckhdhdl/article/view/1313 10.37569/DalatUniversity.14.3S.1313(2024) en Dalat University Journal of Science, Volume 14, Issue 3S; p.61-75 application/pdf Trường Đại học Đà Lạt
institution	Thư viện Trường Đại học Đà Lạt
collection	Thư viện số
language	English
topic	Band-to-band tunneling Channel-buried oxide Doping pocket Line tunneling Low bandgap TFET
spellingShingle	Band-to-band tunneling Channel-buried oxide Doping pocket Line tunneling Low bandgap TFET Bui, Huu Thai Shih, Chun-Hsing Nguyen, Dang Chien A VERY LOW BANDGAP LINE-TUNNEL FIELD EFFECT TRANSISTOR WITH CHANNEL-BURIED OXIDE AND LATERALLY DOPED POCKET
description	Low bandgap and line tunneling techniques have demonstrated the most effectiveness in enhancing the on-current of tunnel field-effect transistors (TFETs). This study examines the mechanisms and designs of channel-buried oxide and a laterally doped pocket for a very low bandgap line-TFET. Numerical TCAD simulations show that the channel-buried oxide is needed to prevent off-state lateral tunneling while still maintaining the on-state vertical tunneling. The buried oxide pillar should be high so that the channel is thin, about 10 nm thick, to completely suppress the tunneling leakage. The dopant pocket is required to trigger the line tunneling earlier than the point tunneling to improve the subthreshold swing and on-current. Increasing the pocket concentration or decreasing the pocket thickness both cause an increase not only in the vertical band bending but also in the effective gate-insulator thickness. Because of the trade-off between these two operation parameters, for a given thickness/concentration, there exists an optimal concentration/thickness of the pocket to maximize the on-current. The on-current is optimized using a heavy, thin pocket, for which the band bending is maximized and the effective gate-insulator thickness is minimized. For the fabrication feasibility using existing doping techniques, the pocket concentration and thickness should be 1019 cm-3 and 4 nm, respectively, to maximize the on-current of the InAs line-TFET.
format	Article
author	Bui, Huu Thai Shih, Chun-Hsing Nguyen, Dang Chien
author_facet	Bui, Huu Thai Shih, Chun-Hsing Nguyen, Dang Chien
author_sort	Bui, Huu Thai
title	A VERY LOW BANDGAP LINE-TUNNEL FIELD EFFECT TRANSISTOR WITH CHANNEL-BURIED OXIDE AND LATERALLY DOPED POCKET
title_short	A VERY LOW BANDGAP LINE-TUNNEL FIELD EFFECT TRANSISTOR WITH CHANNEL-BURIED OXIDE AND LATERALLY DOPED POCKET
title_full	A VERY LOW BANDGAP LINE-TUNNEL FIELD EFFECT TRANSISTOR WITH CHANNEL-BURIED OXIDE AND LATERALLY DOPED POCKET
title_fullStr	A VERY LOW BANDGAP LINE-TUNNEL FIELD EFFECT TRANSISTOR WITH CHANNEL-BURIED OXIDE AND LATERALLY DOPED POCKET
title_full_unstemmed	A VERY LOW BANDGAP LINE-TUNNEL FIELD EFFECT TRANSISTOR WITH CHANNEL-BURIED OXIDE AND LATERALLY DOPED POCKET
title_sort	very low bandgap line-tunnel field effect transistor with channel-buried oxide and laterally doped pocket
publisher	Trường Đại học Đà Lạt
publishDate	2024
url	https://scholar.dlu.edu.vn/thuvienso/handle/DLU123456789/256919 https://tckh.dlu.edu.vn/index.php/tckhdhdl/article/view/1313
_version_	1822630718054858752

A VERY LOW BANDGAP LINE-TUNNEL FIELD EFFECT TRANSISTOR WITH CHANNEL-BURIED OXIDE AND LATERALLY DOPED POCKET

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