A VERY LOW BANDGAP LINE-TUNNEL FIELD EFFECT TRANSISTOR WITH CHANNEL-BURIED OXIDE AND LATERALLY DOPED POCKET

समान संसाधन

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  प्रकाशित: (2024)
• Suitability of low-bandgap semiconductors for energy-efficient tunnel-field effect transistors
  द्वारा: Nguyễn, Đăng Chiến, और अन्य
  प्रकाशित: (2024)
• Bandgap-dependent onset behavior of output characteristics in line-tunneling field-effect transistors
  द्वारा: Chun-Hsing Shih, और अन्य
  प्रकाशित: (2023)
• Oxide thickness-dependent effects of source doping profile on the performance of single- and double-gate tunnel field-effect transistors
  द्वारा: Nguyễn, Đăng Chiến, और अन्य
  प्रकाशित: (2023)
• Design and modeling of line-tunneling field-effect transistors using low bandgap semiconductors
  द्वारा: Chun-Hsing Shih, और अन्य
  प्रकाशित: (2024)