A VERY LOW BANDGAP LINE-TUNNEL FIELD EFFECT TRANSISTOR WITH CHANNEL-BURIED OXIDE AND LATERALLY DOPED POCKET
Low bandgap and line tunneling techniques have demonstrated the most effectiveness in enhancing the on-current of tunnel field-effect transistors (TFETs). This study examines the mechanisms and designs of channel-buried oxide and a laterally doped pocket for a very low bandgap line-TFET. Numerical T...
Bewaard in:
| Hoofdauteurs: | , , |
|---|---|
| Formaat: | Artikel |
| Taal: | English |
| Gepubliceerd in: |
Trường Đại học Đà Lạt
2024
|
| Onderwerpen: | |
| Online toegang: | https://scholar.dlu.edu.vn/thuvienso/handle/DLU123456789/256919 https://tckh.dlu.edu.vn/index.php/tckhdhdl/article/view/1313 |
| Tags: |
Voeg label toe
Geen labels, Wees de eerste die dit record labelt!
|
| Thư viện lưu trữ: | Thư viện Trường Đại học Đà Lạt |
|---|
Wees de eerste die reageert!