A VERY LOW BANDGAP LINE-TUNNEL FIELD EFFECT TRANSISTOR WITH CHANNEL-BURIED OXIDE AND LATERALLY DOPED POCKET
Low bandgap and line tunneling techniques have demonstrated the most effectiveness in enhancing the on-current of tunnel field-effect transistors (TFETs). This study examines the mechanisms and designs of channel-buried oxide and a laterally doped pocket for a very low bandgap line-TFET. Numerical T...
Zapisane w:
| Główni autorzy: | , , |
|---|---|
| Format: | Artykuł |
| Język: | English |
| Wydane: |
Trường Đại học Đà Lạt
2024
|
| Hasła przedmiotowe: | |
| Dostęp online: | https://scholar.dlu.edu.vn/thuvienso/handle/DLU123456789/256919 https://tckh.dlu.edu.vn/index.php/tckhdhdl/article/view/1313 |
| Etykiety: |
Dodaj etykietę
Nie ma etykietki, Dołącz pierwszą etykiete!
|
| Thư viện lưu trữ: | Thư viện Trường Đại học Đà Lạt |
|---|
Napisz pierwszy komentarz!