A VERY LOW BANDGAP LINE-TUNNEL FIELD EFFECT TRANSISTOR WITH CHANNEL-BURIED OXIDE AND LATERALLY DOPED POCKET
Low bandgap and line tunneling techniques have demonstrated the most effectiveness in enhancing the on-current of tunnel field-effect transistors (TFETs). This study examines the mechanisms and designs of channel-buried oxide and a laterally doped pocket for a very low bandgap line-TFET. Numerical T...
Kaydedildi:
| Asıl Yazarlar: | , , |
|---|---|
| Materyal Türü: | Makale |
| Dil: | English |
| Baskı/Yayın Bilgisi: |
Trường Đại học Đà Lạt
2024
|
| Konular: | |
| Online Erişim: | https://scholar.dlu.edu.vn/thuvienso/handle/DLU123456789/256919 https://tckh.dlu.edu.vn/index.php/tckhdhdl/article/view/1313 |
| Etiketler: |
Etiketle
Etiket eklenmemiş, İlk siz ekleyin!
|
| Thư viện lưu trữ: | Thư viện Trường Đại học Đà Lạt |
|---|
İlk yorumlayan siz olun!