A source-side injection lucky electron model for Schottky barrier metal-oxide-semiconductor devices

par Chun-Hsing Shih, Ji-Ting Liang, Jhong-Sheng Wang, Nguyễn, Đăng Chiến
Publié 2024

Effects of Edge Thinning on Fowler-Nordheim Tunneling Current of NAND-Type Flash Memory Cells

par Ji-Ting Liang, Chun-Hsing Shih, Yan-Xiang Luo, Ming-Kun Huang, Nguyễn, Đăng Chiến, Ruei-Kai Shia, Sau-Mou Wu, Chenhsin Lien, Wen-Fa Wu
Publié 2024

Schottky barrier silicon nanowire SONOS memory with ultralow programming and erasing voltages

par Chun-Hsing Shih, Wei Chang, Yan-Xiang Luo, Ji-Ting Liang, Ming-Kun Huang, Nguyễn, Đăng Chiến, Ruei-Kai Shia, Jr-Jie Tsai, Wen-Fa Wu, Chenhsin Lien
Publié 2024

Impact of edge encroachment on programming and erasing gate current in NAND-type Flash memory

par Ji-Ting Liang, Chun-Hsing Shih, Wei Chang, Yan-Xiang Luo, Ming-Kun Huang, Nguyễn, Đăng Chiến, Wen-Fa Wu, Sau-Mou Wu, Chenhsin Lien, Riichiro Shirota, Chiu-Tsung Huang, Su Lu, Alex Wang
Publié 2024