A source-side injection lucky electron model for Schottky barrier metal-oxide-semiconductor devices
This letter explores source-side injection in Schottky barrier metal-oxide-semiconductor (MOS) devices. Unlike drain-side injection in conventional MOS devices, a source-side lucky electron model predicts the specific source-side injection in Schottky barrier MOS devices. The source-side electric fi...
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| Những tác giả chính: | , , , |
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| Formáid: | Journal article |
| Teanga: | English |
| Foilsithe: |
IEEE Publishing
2024
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| Ábhair: | |
| Rochtain Ar Líne: | https://scholar.dlu.edu.vn/handle/123456789/3299 |
| Clibeanna: |
Cuir Clib Leis
Gan Chlibeanna, Bí ar an gcéad duine leis an taifead seo a chlibeáil!
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| Thư viện lưu trữ: | Thư viện Trường Đại học Đà Lạt |
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