Short-drain effect of 5 nm tunnel field-effect transistors

بواسطة Yu-Hsuan Chen, Nguyễn, Đăng Chiến, Jr-Jie Tsai, Yan-Xiang Luo, Chun-Hsing Shih
منشور في 2024

Transverse scaling of Schottky barrier charge-trapping cells for energy-efficient applications

بواسطة Hung-Jin Teng, Yu-Hsuan Chen, Jr-Jie Tsai, Nguyễn, Đăng Chiến, Chenhsin Lien, Chun-Hsing Shih
منشور في 2021

Effects of High Temperatures on Cell Reading, Programming, and Erasing of Schottky Barrier Charge-Trapping Memories

بواسطة Jr-Jie Tsai, Wen-Fa Wu, Yu-Hsuan Chen, Hung-Jin Teng, Nguyễn, Đăng Chiến, Chun-Hsing Shih
منشور في 2023

Schottky barrier silicon nanowire SONOS memory with ultralow programming and erasing voltages

بواسطة Chun-Hsing Shih, Wei Chang, Yan-Xiang Luo, Ji-Ting Liang, Ming-Kun Huang, Nguyễn, Đăng Chiến, Ruei-Kai Shia, Jr-Jie Tsai, Wen-Fa Wu, Chenhsin Lien
منشور في 2024