Short-drain effect of 5 nm tunnel field-effect transistors

gan Yu-Hsuan Chen, Nguyễn, Đăng Chiến, Jr-Jie Tsai, Yan-Xiang Luo, Chun-Hsing Shih
Cyhoeddwyd 2024

Transverse scaling of Schottky barrier charge-trapping cells for energy-efficient applications

gan Hung-Jin Teng, Yu-Hsuan Chen, Jr-Jie Tsai, Nguyễn, Đăng Chiến, Chenhsin Lien, Chun-Hsing Shih
Cyhoeddwyd 2021

Effects of High Temperatures on Cell Reading, Programming, and Erasing of Schottky Barrier Charge-Trapping Memories

gan Jr-Jie Tsai, Wen-Fa Wu, Yu-Hsuan Chen, Hung-Jin Teng, Nguyễn, Đăng Chiến, Chun-Hsing Shih
Cyhoeddwyd 2023

Schottky barrier silicon nanowire SONOS memory with ultralow programming and erasing voltages

gan Chun-Hsing Shih, Wei Chang, Yan-Xiang Luo, Ji-Ting Liang, Ming-Kun Huang, Nguyễn, Đăng Chiến, Ruei-Kai Shia, Jr-Jie Tsai, Wen-Fa Wu, Chenhsin Lien
Cyhoeddwyd 2024