Effects of High Temperatures on Cell Reading, Programming, and Erasing of Schottky Barrier Charge-Trapping Memories

著者: Jr-Jie Tsai, Wen-Fa Wu, Yu-Hsuan Chen, Hung-Jin Teng, Nguyễn, Đăng Chiến, Chun-Hsing Shih
出版事項 2023

Effects of Edge Thinning on Fowler-Nordheim Tunneling Current of NAND-Type Flash Memory Cells

著者: Ji-Ting Liang, Chun-Hsing Shih, Yan-Xiang Luo, Ming-Kun Huang, Nguyễn, Đăng Chiến, Ruei-Kai Shia, Sau-Mou Wu, Chenhsin Lien, Wen-Fa Wu
出版事項 2024

Schottky barrier silicon nanowire SONOS memory with ultralow programming and erasing voltages

著者: Chun-Hsing Shih, Wei Chang, Yan-Xiang Luo, Ji-Ting Liang, Ming-Kun Huang, Nguyễn, Đăng Chiến, Ruei-Kai Shia, Jr-Jie Tsai, Wen-Fa Wu, Chenhsin Lien
出版事項 2024

Impact of edge encroachment on programming and erasing gate current in NAND-type Flash memory

著者: Ji-Ting Liang, Chun-Hsing Shih, Wei Chang, Yan-Xiang Luo, Ming-Kun Huang, Nguyễn, Đăng Chiến, Wen-Fa Wu, Sau-Mou Wu, Chenhsin Lien, Riichiro Shirota, Chiu-Tsung Huang, Su Lu, Alex Wang
出版事項 2024