Ionizing Radiation Effects in Mos Oxides (International Series on Advances in Solid State Electronics and Technology /
This volume is intended to serve as an updated critical guide to the extensive literature on the basic physical mechanisms controlling the radiation and reliability responses of MOS oxides. There has been a significant amount of work on the nature of the electrically active defects in MOS oxides whi...
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| フォーマット: | 図書 |
| 言語: | Vietnamese |
| 出版事項: |
Singapore :
World Scientific ,
2000
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| Thư viện lưu trữ: | Thư viện Trường CĐ Kỹ Thuật Cao Thắng |
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