Lonizing radiation effects in mos oxides
This volume is intended to serve as an updated critical guide to the extensive literature on the basic physical mechanisms controlling the radiation and reliability responses of MOS oxides.
שמור ב:
| מחבר ראשי: | |
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| פורמט: | ספר |
| שפה: | Vietnamese |
| יצא לאור: |
Singapore
World Scientific
1999
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| סדרה: | International advances in solid state electronics and technology
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| נושאים: | |
| תגים: |
הוספת תג
אין תגיות, היה/י הראשונ/ה לתייג את הרשומה!
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| Thư viện lưu trữ: | Thư viện Trường Đại học Nam Cần Thơ |
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