Ionizing radiation effects in MOS oxides

This volume is intended to serve as an updated critical guide to the extensive literature on the basic physical mechanisms controlling the radiation and reliability responses of MOS oxides. There has been a significant amount of work on the nature of the electrically active defects in MOS oxides whi...

Description complète

Enregistré dans:
Détails bibliographiques
Auteur principal: Oldham, Timothy R.
Autres auteurs: Timothy R. Oldham
Langue:Undetermined
English
Publié: Singapore,River Edge, NJ World Scientific 1999
Sujets:
Tags: Ajouter un tag
Pas de tags, Soyez le premier à ajouter un tag!
Thư viện lưu trữ: Trung tâm Học liệu Trường Đại học Trà Vinh