Ionizing radiation effects in MOS oxides

This volume is intended to serve as an updated critical guide to the extensive literature on the basic physical mechanisms controlling the radiation and reliability responses of MOS oxides. There has been a significant amount of work on the nature of the electrically active defects in MOS oxides whi...

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Autor principal: Oldham, Timothy R.
Outros Autores: Timothy R. Oldham
Idioma:Undetermined
English
Publicado em: Singapore,River Edge, NJ World Scientific 1999
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Thư viện lưu trữ: Trung tâm Học liệu Trường Đại học Trà Vinh