Ionizing radiation effects in MOS oxides
This volume is intended to serve as an updated critical guide to the extensive literature on the basic physical mechanisms controlling the radiation and reliability responses of MOS oxides. There has been a significant amount of work on the nature of the electrically active defects in MOS oxides whi...
保存先:
| 第一著者: | |
|---|---|
| その他の著者: | |
| 言語: | Undetermined English |
| 出版事項: |
Singapore,River Edge, NJ
World Scientific
1999
|
| 主題: | |
| タグ: |
タグ追加
タグなし, このレコードへの初めてのタグを付けませんか!
|
| Thư viện lưu trữ: | Trung tâm Học liệu Trường Đại học Trà Vinh |
|---|