Ionizing radiation effects in MOS oxides

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Ionizing radiation effects in MOS oxides

This volume is intended to serve as an updated critical guide to the extensive literature on the basic physical mechanisms controlling the radiation and reliability responses of MOS oxides. There has been a significant amount of work on the nature of the electrically active defects in MOS oxides whi...

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Bibliografski detalji
Glavni autor:	Oldham, Timothy R.
Daljnji autori:	Timothy R. Oldham
Jezik:	Undetermined English
Izdano:	Singapore,River Edge, NJ World Scientific 1999
Teme:	Metal oxide semiconductors
Oznake:	Dodaj oznaku Bez oznaka, Budi prvi tko označuje ovaj zapis!

Thư viện lưu trữ:	Trung tâm Học liệu Trường Đại học Trà Vinh

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