Ionizing radiation effects in MOS oxides

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Ionizing radiation effects in MOS oxides

This volume is intended to serve as an updated critical guide to the extensive literature on the basic physical mechanisms controlling the radiation and reliability responses of MOS oxides. There has been a significant amount of work on the nature of the electrically active defects in MOS oxides whi...

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书目详细资料
主要作者:	Oldham, Timothy R.
其他作者:	Timothy R. Oldham
语言:	Undetermined English
出版:	Singapore,River Edge, NJ World Scientific 1999
主题:	Metal oxide semiconductors
标签:	添加标签没有标签, 成为第一个标记此记录!

Thư viện lưu trữ:	Trung tâm Học liệu Trường Đại học Trà Vinh

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