A simple approach for integrating quantum confinement effects into TCAD Simulations of tunnel field-effect transistors
Quantum confinement effects (QCEs) are significant in tunnel field-effect transistors (TFETs) since their operation is based on the mechanism of band-to-band tunneling. This study presents a simple approach for integrating QCEs into the semiclassical TCAD simulations of TFETs. The approach was based...
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Thư viện Trường Đại học Đà Lạt |
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Quantum confinement Bandgap widening Band-to-band tunneling TCAD simulation Tunnel FET |
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Quantum confinement Bandgap widening Band-to-band tunneling TCAD simulation Tunnel FET Bui Huu Thai Chun-Hsing Shih Nguyễn, Đăng Chiến A simple approach for integrating quantum confinement effects into TCAD Simulations of tunnel field-effect transistors |
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Quantum confinement effects (QCEs) are significant in tunnel field-effect transistors (TFETs) since their operation is based on the mechanism of band-to-band tunneling. This study presents a simple approach for integrating QCEs into the semiclassical TCAD simulations of TFETs. The approach was based on a post-processing computation in which 1D Schrodinger equations were first solved manually, then their solutions were used to modify the conduction and valence band profiles in the 2D TCAD simulations. For each bias condition, only a 1D potential profile at the position of the maximum tunneling generation was adopted to describe the QC through the solutions of Schrodinger equations for electrons and holes. The quantum-simulated results based on this simple method show good agreements with both quantum-mechanical simulations based on a sophisticated approach and experimental data. The analyses also show that the van Dort quantum model available in commercial TCAD simulators is not appropriate for describing QCEs in TFETs. The approach can be practically employed in studying the influences of QCEs on the electrical characteristics, in particular the dependence of QCEs on the body thickness of TFET devices. |
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Journal article |
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Bui Huu Thai Chun-Hsing Shih Nguyễn, Đăng Chiến |
| author_facet |
Bui Huu Thai Chun-Hsing Shih Nguyễn, Đăng Chiến |
| author_sort |
Bui Huu Thai |
| title |
A simple approach for integrating quantum confinement effects into TCAD Simulations of tunnel field-effect transistors |
| title_short |
A simple approach for integrating quantum confinement effects into TCAD Simulations of tunnel field-effect transistors |
| title_full |
A simple approach for integrating quantum confinement effects into TCAD Simulations of tunnel field-effect transistors |
| title_fullStr |
A simple approach for integrating quantum confinement effects into TCAD Simulations of tunnel field-effect transistors |
| title_full_unstemmed |
A simple approach for integrating quantum confinement effects into TCAD Simulations of tunnel field-effect transistors |
| title_sort |
simple approach for integrating quantum confinement effects into tcad simulations of tunnel field-effect transistors |
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Springer Nature |
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2024 |
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https://scholar.dlu.edu.vn/handle/123456789/3628 |
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1817660465151475712 |
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oai:scholar.dlu.edu.vn:123456789-36282024-12-03T00:19:15Z A simple approach for integrating quantum confinement effects into TCAD Simulations of tunnel field-effect transistors Bui Huu Thai Chun-Hsing Shih Nguyễn, Đăng Chiến Quantum confinement Bandgap widening Band-to-band tunneling TCAD simulation Tunnel FET Quantum confinement effects (QCEs) are significant in tunnel field-effect transistors (TFETs) since their operation is based on the mechanism of band-to-band tunneling. This study presents a simple approach for integrating QCEs into the semiclassical TCAD simulations of TFETs. The approach was based on a post-processing computation in which 1D Schrodinger equations were first solved manually, then their solutions were used to modify the conduction and valence band profiles in the 2D TCAD simulations. For each bias condition, only a 1D potential profile at the position of the maximum tunneling generation was adopted to describe the QC through the solutions of Schrodinger equations for electrons and holes. The quantum-simulated results based on this simple method show good agreements with both quantum-mechanical simulations based on a sophisticated approach and experimental data. The analyses also show that the van Dort quantum model available in commercial TCAD simulators is not appropriate for describing QCEs in TFETs. The approach can be practically employed in studying the influences of QCEs on the electrical characteristics, in particular the dependence of QCEs on the body thickness of TFET devices. 24 9 2024-12-03T00:19:05Z 2024-12-03T00:19:05Z 2025 Journal article Bài báo đăng trên tạp chí thuộc ISI, bao gồm book chapter https://scholar.dlu.edu.vn/handle/123456789/3628 10.1007/s10825-024-02253-7 en Nghiên cứu tối ưu hóa các tham số của thân linh kiện nâng cao đặc tính điện của các transistor hiệu ứng trường xuyên hầm (TFET) Journal of Computational Electronics 1569-8025 B2023-DLA-03 [1] Anderson, B.L., Anderson, R.L.: Fundamentals of semiconductor devices. McGraw-Hill (2005) [2] Ionescu, A.M., Riel, H.: Tunnel field-effect transistors as energy-efficient electronic switches. Nature 479, 329-337 (2011) [3] Appenzeller, J., Lin, Y.-M., Knoch, J., Avouris, Ph.: Band-to-band tunneling in carbon nanotube field-effect transistors. Phys. Rev. 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Electron Devices 60, 2754-2760 (2013) [18] Vandenberghe, W.G., Soree, B., Magnus, W., Fischetti, M.V., Verhulst, A.S., Groeseneken, G.: Two-dimensional quantum mechanical modeling of band-to-band tunneling in indirect semiconductors. Int. Electron Devices Meeting, pp. 1-4 (2011) [19] van Dort, M.J., Woerlee, P.H., Walker, A.J.: A simple model for quantisation effects in heavily-doped silicon MOSFETs at inversion conditions. Solid-State Electron. 37, 411-414 (1994) [20] Taurus Medici User Guide, Version R-2020.09: Synopsys Inc. (2020) [21] Chien, N.D., Thai, B.H., Shih, C.-H.: Thin-body effects in double-gate tunnel field-effect transistors. J. Phys. D: Appl. Phys. 57, 215301 (2024) [22] Griffiths, D.J.: Introduction to quantum mechanics. Prentice Hall (1994) [23] Sitnitsky, A.E.: Analytic calculation of ground state splitting in symmetric double well potential. Comput. Theor. Chem. 1138, 15–22 (2018) [24] Rendon, M., Cao, C., Landazuri, K., Garzon, E., Procel, L.M., Taco, R.: Performance benchmarking of TFET and FinFET digital circuits from a synthesis-based perspective, Electronics 11, 632 (2022) [25] Wan, J., Royer, C.L., Zaslavsky, A., Cristoloveanu, S.:Tunneling FETs on SOI: Suppression of ambipolar leakage, low-frequency noise behavior, and modeling, Solid-State Electron. 65-66, 226-233 (2011) [26] Vandenberghe, W.G., Soree, B., Magnus, W., Groeseneken, G., Fischetti, M.V.: Impact of field-induced quantum confinement in tunneling field-effect devices. Appl. Phys. Lett. 98, 143503 (2011) [27] Hemanjaneyulu, K., Shrivastava, M.: Fin enabled area scaled tunnel FET. IEEE Trans. Electron Devices 62, 3184-3191 (2015) [28] Cherik, I.C., Mohammadi, S., Orouji, A.A.: Switching performance enhancement in nanotube double-gate tunneling field-effect transistor with germanium source regions. IEEE Trans. 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