Photoluminescence properties of ZnO thin film on sapphire substrates fabricated by ion implantation at elevated temperature and thermal oxidation
ZnO thin films on sapphire substrate were fabricated by ion implantation combined with thermal oxidation. A sapphire substrate was implanted with 50 keV zinc ions at 350 °C with a fluence of 1.5 × 1017 ions cm−2, then annealed in a tube furnace in oxygen ambient in 2 h at 650 °C. Photoluminescence s...
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| Định dạng: | Journal article |
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2023
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| Truy cập trực tuyến: | http://scholar.dlu.edu.vn/handle/123456789/1665 https://www.sciencedirect.com/science/article/abs/pii/S0168583X09009112#aep-abstract-id12 |
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oai:scholar.dlu.edu.vn:123456789-16652023-01-04T10:04:01Z Photoluminescence properties of ZnO thin film on sapphire substrates fabricated by ion implantation at elevated temperature and thermal oxidation Trịnh, Thị Tú Anh ZnOIon implantationThermal oxidationPhotoluminescence ZnO thin films on sapphire substrate were fabricated by ion implantation combined with thermal oxidation. A sapphire substrate was implanted with 50 keV zinc ions at 350 °C with a fluence of 1.5 × 1017 ions cm−2, then annealed in a tube furnace in oxygen ambient in 2 h at 650 °C. Photoluminescence spectra were collected at temperatures from 80 to 300 K to understand the optical properties of this film. The photoluminescence spectrum at 300 K included a UV peak at 377 nm and a broad peak from deep level emission at 500 nm. The fine spectra structure at 80 K consisted of the free exciton at 3.373 eV and the donor bound exciton at 3.357 eV. The first and second phonon replicas of free excitons were also observed and the origin of the deep level emission peak was clarified. 267 21-22 3535-3538 2023-01-03T06:41:41Z 2023-01-03T06:41:41Z 2009 Journal article Bài báo đăng trên tạp chí quốc tế (có ISSN), bao gồm book chapter http://scholar.dlu.edu.vn/handle/123456789/1665 https://www.sciencedirect.com/science/article/abs/pii/S0168583X09009112#aep-abstract-id12 en Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms |
| institution |
Thư viện Trường Đại học Đà Lạt |
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Thư viện số |
| language |
English |
| topic |
ZnOIon implantationThermal oxidationPhotoluminescence |
| spellingShingle |
ZnOIon implantationThermal oxidationPhotoluminescence Trịnh, Thị Tú Anh Photoluminescence properties of ZnO thin film on sapphire substrates fabricated by ion implantation at elevated temperature and thermal oxidation |
| description |
ZnO thin films on sapphire substrate were fabricated by ion implantation combined with thermal oxidation. A sapphire substrate was implanted with 50 keV zinc ions at 350 °C with a fluence of 1.5 × 1017 ions cm−2, then annealed in a tube furnace in oxygen ambient in 2 h at 650 °C. Photoluminescence spectra were collected at temperatures from 80 to 300 K to understand the optical properties of this film. The photoluminescence spectrum at 300 K included a UV peak at 377 nm and a broad peak from deep level emission at 500 nm. The fine spectra structure at 80 K consisted of the free exciton at 3.373 eV and the donor bound exciton at 3.357 eV. The first and second phonon replicas of free excitons were also observed and the origin of the deep level emission peak was clarified. |
| format |
Journal article |
| author |
Trịnh, Thị Tú Anh |
| author_facet |
Trịnh, Thị Tú Anh |
| author_sort |
Trịnh, Thị Tú Anh |
| title |
Photoluminescence properties of ZnO thin film on sapphire substrates fabricated by ion implantation at elevated temperature and thermal oxidation |
| title_short |
Photoluminescence properties of ZnO thin film on sapphire substrates fabricated by ion implantation at elevated temperature and thermal oxidation |
| title_full |
Photoluminescence properties of ZnO thin film on sapphire substrates fabricated by ion implantation at elevated temperature and thermal oxidation |
| title_fullStr |
Photoluminescence properties of ZnO thin film on sapphire substrates fabricated by ion implantation at elevated temperature and thermal oxidation |
| title_full_unstemmed |
Photoluminescence properties of ZnO thin film on sapphire substrates fabricated by ion implantation at elevated temperature and thermal oxidation |
| title_sort |
photoluminescence properties of zno thin film on sapphire substrates fabricated by ion implantation at elevated temperature and thermal oxidation |
| publishDate |
2023 |
| url |
http://scholar.dlu.edu.vn/handle/123456789/1665 https://www.sciencedirect.com/science/article/abs/pii/S0168583X09009112#aep-abstract-id12 |
| _version_ |
1768306229375926272 |