Photoluminescence properties of ZnO thin film on sapphire substrates fabricated by ion implantation at elevated temperature and thermal oxidation

ZnO thin films on sapphire substrate were fabricated by ion implantation combined with thermal oxidation. A sapphire substrate was implanted with 50 keV zinc ions at 350 °C with a fluence of 1.5 × 1017 ions cm−2, then annealed in a tube furnace in oxygen ambient in 2 h at 650 °C. Photoluminescence s...

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Hoofdauteur: Trịnh, Thị Tú Anh
Formaat: Journal article
Taal:English
Gepubliceerd in: 2023
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Online toegang:http://scholar.dlu.edu.vn/handle/123456789/1665
https://www.sciencedirect.com/science/article/abs/pii/S0168583X09009112#aep-abstract-id12
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