Photoluminescence properties of ZnO thin film on sapphire substrates fabricated by ion implantation at elevated temperature and thermal oxidation
ZnO thin films on sapphire substrate were fabricated by ion implantation combined with thermal oxidation. A sapphire substrate was implanted with 50 keV zinc ions at 350 °C with a fluence of 1.5 × 1017 ions cm−2, then annealed in a tube furnace in oxygen ambient in 2 h at 650 °C. Photoluminescence s...
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Formaat: | Journal article |
Taal: | English |
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2023
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Online toegang: | http://scholar.dlu.edu.vn/handle/123456789/1665 https://www.sciencedirect.com/science/article/abs/pii/S0168583X09009112#aep-abstract-id12 |
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Thư viện lưu trữ: | Thư viện Trường Đại học Đà Lạt |
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